UF830-E datasheet, mosfet equivalent, Unisonic Technologies

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Features and benefits

* RDS(ON) < 1.5Ω@ VGS=10V, ID=2.5A * Single Pulse Avalanche Energy Rated * Rugged- SOA is Power Dissipation Limited * Fast Switching Speeds * Linear Transfer Characterist.

Application

such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
* FEATURES * RDS(ON) < 1.

Description

The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
* FEATURES * RDS(ON) < 1.5Ω.

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